19 results
Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I12-04
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- 2006
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Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 7 / 2002
- Published online by Cambridge University Press:
- 13 June 2014, e8
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- 2002
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Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, e8
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- 2000
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Present Status of III-Nitride Based Photodetectors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T3.7.1
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- 2000
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Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e9
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- 1998
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Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e8
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- 1998
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Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e24
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- 1998
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Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e20
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- 1998
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Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e10
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- 1997
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Yellow luminescence in Mg-doped GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e28
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- 1997
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Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e32
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- 1997
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Temperature behaviour of the yellow emission in GaN
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e36
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- 1997
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Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e12
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- 1997
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p-doping of GaN by MOVPE
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e37
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- 1997
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XPS study of Au/GaN and Pt/GaN contacts
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e23
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- 1997
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Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e9
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- 1996
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Yellow Band and Deep levels in Undoped MOVPE GaN.
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e7
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- 1996
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Alternative N precursors and Mg doped GaN grown by MOVPE
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e17
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- 1996
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Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e25
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- 1996
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